Reflection High-Energy Electron Diffraction Oscillations During Molecular Beam Epitaxial Growth of ZnSe on (001)GaAs
- 1 December 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (12A) , L952
- https://doi.org/10.1143/jjap.25.l952
Abstract
Reflection high-energy electron diffraction (RHEED) intensity oscillations during molecular beam epitaxy (MBE) of II-VI compound of ZnSe are observed for the first time. The MBE growth was achieved on (001)GaAs substrate. After an 1-µm thick ZnSe buffer was grown, stable oscillations were observed at around the molecular beam flux ratio of Zn to Se of 1:3. One period of the oscillation corresponds to the growth rate of monomolecular layer. The observation of the oscillatory behaviors of RHEED is discussed in terms of surface morphology as is observed by RHEED.Keywords
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