High-frequency measurements of AlGaN/GaN HEMTs at high temperatures
- 1 August 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 22 (8) , 376-377
- https://doi.org/10.1109/55.936348
Abstract
High-frequency measurements of the 1.3-μm-long gate AlGaN-GaN HEMTs have been performed at temperatures ranging from 23 to 187/spl deg/C. The cutoff frequency f T decreased with increasing temperature. It was 13.7 and 8.7 GHz at 23 and 187/spl deg/C, respectively. The effective electron velocities /spl upsi//sub eff/ in the channel evaluated from the total delay time versus I/sub D/-inverse relation were 1.2 and 0.8×10/sup 7/ cm/s at 23 and 187/spl deg/C, respectively.Keywords
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