Raman spectroscopic study of residual acceptors in semi-insulating bulk GaAs
- 15 July 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (2) , 802-807
- https://doi.org/10.1063/1.341928
Abstract
Electronic Raman scattering (ERS) has been used to study residual shallow acceptors in undoped semi‐insulating (SI) GaAs grown by the liquid‐encapsulated Czochralski technique. The dispersion of the cross section for ERS of shallow acceptors, as well as its absolute value, has been measured. It is shown that ERS allows a quantitative analysis of residual shallow acceptors in SI GaAs. Calibration factors for C and Zn acceptors are given. The detection limit of ERS is determined to ∼5×1014 cm−3 for 500‐μm‐thick standard wafers. Spatially resolved measurements show a systematic variation of the residual acceptor concentration across 2‐in. GaAs wafers.This publication has 19 references indexed in Scilit:
- Ground-state splitting of the 78-meV double acceptor in GaAsPhysical Review B, 1987
- Residual acceptor assessment in as-grown bulk GaAs by Raman and selective pair luminescence spectroscopy: A comparative studyApplied Physics Letters, 1986
- Optically induced far-infrared absorption from residual acceptors in as-grown GaAsApplied Physics Letters, 1986
- Calibration of the carbon localized vibrational mode absorption line in GaAsApplied Physics Letters, 1986
- Raman scattering as a quantitative tool for residual acceptor assessment in semi-insulating GaAsApplied Physics Letters, 1986
- Electronic Raman scattering of the negative charge state of the 78-meV double acceptor in GaAsPhysical Review B, 1986
- Electronic Raman spectra of shallow acceptors in semi-insulating GaAsPhysical Review B, 1985
- Quantitative analysis of carbon in liquid-encapsulated Czochralski GaAsJournal of Applied Physics, 1985
- Selective excitation luminescence and electronic Raman scattering study of the 78-meV acceptor in GaAsApplied Physics Letters, 1984
- An infrared study of the shallow acceptor states in GaAsJournal of Physics C: Solid State Physics, 1978