Low temperature and selective growth of β-SiC using the SiH2Cl2/i-C4H10/HCl/H2 gas system
- 6 August 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (6) , 605-607
- https://doi.org/10.1063/1.103611
Abstract
β‐SiC is grown on a silicon substrate by the chemical vapor deposition method using the SiH2Cl2/i‐C4H10/H2/HCl gas system. Stoichiometric β‐SiC films are obtained with high growth rate at a low temperature of 900 °C. Highly (111) oriented β‐SiC polycrystal is grown on a Si(111) substrate. Moreover, using the above‐mentioned gas system, β‐SiC selective growth is attained on a Si substrate, with no nucleation on the SiO2 area. This letter discusses the i‐C4H10 effects and selective growth condition.Keywords
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