Erratum: Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow-pressure chemical vapor deposition [Appl. Phys. Lett. 5 2, 1797 (1988)]
- 13 June 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (24) , 2061-2063
- https://doi.org/10.1063/1.99663
Abstract
No abstract availableKeywords
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- Silicon epitaxy at 650–800 °C using low-pressure chemical vapor deposition both with and without plasma enhancementJournal of Applied Physics, 1985
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