High density patterned quantum dot arrays fabricated by electron beam lithography and wet chemical etching

We present a quantum dot (QD) fabrication method which allows for the definition of the explicit location and size of an individual QD. We have obtained high optical quality, high density QD arrays utilizing hydrogen silsesquioxane, a negative tone electron beam resist, as a wet etch mask for an underlying quantum well. Linewidths as small as $24\mathrm{meV}$ from a large ensemble of QDs have been demonstrated in photoluminescence measurements at $77\mathrm{K}$ . The magnitude of the experimentally obtained blueshift due to quantum confinement effects is found to be consistent with that predicted by theory.