The location of the lowest conduction band minima in gallium phosphide from bound exciton luminescence
- 30 June 1976
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 14 (1) , 55-79
- https://doi.org/10.1016/0022-2313(76)90037-5
Abstract
No abstract availableThis publication has 35 references indexed in Scilit:
- On the origin of bound exciton lines in indium phosphide and gallium arsenideJournal of Physics C: Solid State Physics, 1974
- Cubic contributions to the spherical model of shallow acceptor statesPhysical Review B, 1974
- Luminescence of GaP at high excitationJournal of Applied Physics, 1973
- Electrical Properties of Carbon-Doped Gallium PhosphideJournal of Applied Physics, 1972
- Donor-Electron Transitions between States Associated with theandConduction-Band Minima in GaPPhysical Review B, 1971
- Optical Absorption Due to Excitation of Electrons Bound to Si and S in GaPPhysical Review B, 1969
- Least Squares Analysis of Hall Data and Donor Levels in Gallium PhosphideJapanese Journal of Applied Physics, 1969
- Higher Donor Excited States for Prolate-Spheroid Conduction Bands: A Reevaluation of Silicon and GermaniumPhysical Review B, 1969
- Electron Mobility and Impurity Concentration inn-GaP Crystals Grown by Slow Cooling of Ga SolutionJapanese Journal of Applied Physics, 1969
- Bound Excitons in GaPPhysical Review B, 1963