Sidegating effect of GaAs MESFETs and leakage current in a semi-insulating GaAs substrate

1 November 1990

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 11 (11) , 505-507
https://doi.org/10.1109/55.63014

Abstract

A series of measurements were made on test structures to study the sidegating effect of GaAs MESFETs. The results show that the small portion of the gate of a MESFET that is in direct contact with the semi-insulating substrate plays an important role in causing the observed rapid rise of leakage current and in enhancing the sidegating effect.

Keywords

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Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
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