Si:Sb blocked impurity band detectors for infrared astronomy
- 1 July 1992
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (1) , 273-275
- https://doi.org/10.1063/1.352127
Abstract
We discuss the characteristics of impurity band conduction detectors prepared from epitaxial Si:Sb. These detectors are sensitive to infrared light at wavelengths between 2.5 and 40 μm and outperform the current state‐of‐the‐art Ge:Be photoconductors for this wavelength range by a combination of a peak responsivity R=32 A/W, low noise equivalent power (NEP) =1.1×10−15 W/Hz1/2 (at a flux of 1012 ph/cm2 s), inherently low sensitivity to cosmic ray particles, and freedom from the anomalous behavior observed in photoconductors.This publication has 7 references indexed in Scilit:
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