Optical investigations on isovalent δ layers in III-V semiconductor compounds
- 15 June 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (12) , 6295-6299
- https://doi.org/10.1063/1.359097
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Formation of interface layers in GaxIn1−xAs/InP heterostructures: A re-evaluation using ultrathin quantum wells as a probeJournal of Applied Physics, 1994
- Effect of In segregation on the structural and optical properties of ultrathin InAs films in GaAsApplied Physics Letters, 1992
- Exciton localization in submonolayer InAs/GaAs multiple quantum wellsPhysical Review B, 1990
- Photoluminescence from GaAs/AlGaAs quantum wells with InAs monomolecular planes grown by flow-rate modulation epitaxySurface Science, 1990
- Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor depositionApplied Physics Letters, 1988
- Theory of isoelectronic trapsJournal of Luminescence, 1973
- Binding to Isoelectronic Impurities in SemiconductorsPhysical Review Letters, 1972
- Toward a Theory of Isoelectronic Impurities in SemiconductorsPhysical Review B, 1968
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review B, 1966
- LUMINESCENCE DUE TO THE ISOELECTRONIC SUBSTITUTION OF BISMUTH FOR PHOSPHORUS IN GALLIUM PHOSPHIDEApplied Physics Letters, 1966