Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells
- 1 December 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (12A) , L1308
- https://doi.org/10.1143/jjap.40.l1308
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Pulsed atomic layer epitaxy of quaternary AlInGaN layersApplied Physics Letters, 2001
- Characteristics of Ultraviolet Laser Diodes Composed of Quaternary AlxInyGa(1-x-y)NJapanese Journal of Applied Physics, 2001
- Optical bandgap formation in AlInGaN alloysApplied Physics Letters, 2000
- Room Temperature 339 nm Emission from Al0.13Ga0.87N/Al0.10Ga0.90N Double Heterostructure Light-Emitting Diode on Sapphire SubstrateJapanese Journal of Applied Physics, 2000
- Lattice and energy band engineering in AlInGaN/GaN heterostructuresApplied Physics Letters, 2000
- Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light EmittersJapanese Journal of Applied Physics, 1997
- White light from InGaN/conjugated polymer hybrid light-emitting diodesApplied Physics Letters, 1997
- GaN/AlN digital alloy short-period superlattices by switched atomic layer metalorganic chemical vapor depositionApplied Physics Letters, 1993
- Low pressure metalorganic chemical vapor deposition of AIN over sapphire substratesApplied Physics Letters, 1992
- Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor depositionApplied Physics Letters, 1992