A SIMS and TEM analysis of the growth mechanisms of annealed buried SiO2 layers formed by incremental high-dose oxygen Ion implantation into silicon at 150 keV
- 1 March 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 39 (1-4) , 215-219
- https://doi.org/10.1016/0168-583x(89)90774-x
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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