Studies on the interface between novel type ZnO and p-a-SiC:H in 1.5 eV a-SiGe:H pin diodes in comparison to SnOx and ITO
- 31 August 1992
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 27 (3) , 217-231
- https://doi.org/10.1016/0927-0248(92)90084-3
Abstract
No abstract availableKeywords
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