Determination of diffusion mechanisms in amorphous silicon
- 15 April 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (15) , 8355-8358
- https://doi.org/10.1103/physrevb.45.8355
Abstract
We have established experimentally and theoretically that transition metals in amorphous Si undergo direct interstitial diffusion that is retarded by temporary trapping at the defects intrinsic to the amorphous structure. The diffusion of Cu, Zn, Pd, Ag, Pt, and Au has been investigated by means of Rutherford-backscattering spectrometry and that of Au tracer atoms by neutron-activation and sputter-sectioning analysis. The data can be fitted using the foreign-atom interstitial diffusion coefficients in crystalline Si modified due to the presence of traps with concentrations between 0.2 and 1 at.% and trapping enthalpies of about 0.9 eV.Keywords
This publication has 11 references indexed in Scilit:
- Impurity trapping and gettering in amorphous siliconApplied Physics Letters, 1991
- The Interplay of Solute- and Self-Diffusion - A Key for Revealing Diffusion Mechanisms in Silicon and GermaniumDefect and Diffusion Forum, 1991
- Defect states of amorphous Si probed by the diffusion and solubility of CuApplied Physics Letters, 1990
- Point defect populations in amorphous and crystalline siliconSolid State Communications, 1990
- Gold diffusion in chemical-vapor-deposited amorphous siliconJournal of Applied Physics, 1989
- Diffusion and Solubility of Platinum in SiliconMaterials Science Forum, 1989
- Solubility, diffusion and thermodynamic properties of silver in siliconJournal of Physics D: Applied Physics, 1987
- Diffusion of implanted impurities in amorphous SiNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Diffusion of gold in dislocation-free or highly dislocated silicon measured by the spreading-resistance techniqueApplied Physics A, 1986
- Transition metals in siliconApplied Physics A, 1983