Gold diffusion in chemical-vapor-deposited amorphous silicon
- 15 August 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (4) , 1874-1876
- https://doi.org/10.1063/1.344491
Abstract
The diffusion coefficient of gold implanted into chemical-vapor-deposited (CVD) amorphous silicon has been measured in the temperature range 400–800 °C by Rutherford backscattering spectrometry. In this temperature range the diffusion coefficient varies in the range 10−15 –10−10 cm2 /s and exhibits an activation energy of 1.5±0.1 eV. The diffusion coefficient in amorphous CVD silicon correlates well to the diffusion in ion-implanted amorphous silicon and to the high-temperature diffusion in highly dislocated silicon crystal.This publication has 8 references indexed in Scilit:
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