Solution growth of silicon from liquid tin for application to photovoltaic solar cells
- 29 February 1984
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 27 (2) , 167-176
- https://doi.org/10.1016/0038-1101(84)90108-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Liquid Phase Epitaxial Silicon Diodes: N‐Epitaxial Layers on Boron‐Doped SubstratesJournal of the Electrochemical Society, 1980
- Measurement of heavy doping parameters in silicon by electron-beam-induced currentIEEE Transactions on Electron Devices, 1980
- Updating the limit efficiency of silicon solar cellsIEEE Transactions on Electron Devices, 1980
- Dopant Distribution in Silicon Liquid Phase Epitaxial Layers: Meltback EffectsJournal of the Electrochemical Society, 1979
- Morphology of silicon epitaxial layers grown by undercooling of a saturated tin meltJournal of Crystal Growth, 1977
- Measurements of bandgap narrowing in Si bipolar transistorsSolid-State Electronics, 1976
- Theory of life time measurements with the scanning electron microscope: Steady stateSolid-State Electronics, 1976
- Injected Current Carrier Transport in a Semi-Infinite Semiconductor and the Determination of Lifetimes and Surface Recombination VelocitiesJournal of Applied Physics, 1955