The statistical sputtering contribution to resolution in concentration-depth profiles
- 1 July 1981
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 81 (3) , 239-246
- https://doi.org/10.1016/0040-6090(81)90486-7
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Quantitative depth profiling in surface analysis: A reviewSurface and Interface Analysis, 1980
- Deposition and characterization of thin SiOx filmsThin Solid Films, 1980
- A theoretical treatment of cascade mixing in depth profiling by sputteringPhysics Letters A, 1979
- Comment on “Evaluation of concentration-depth profiles by sputtering in SIMS and AES” by S. HofmannApplied Physics A, 1979
- The depth resolution of sputter profilingApplied Physics A, 1979
- Depth resolution in sputter profilingApplied Physics A, 1977
- Influence of ion bombardment on depth resolution in Auger electron spectroscopy analysis of thin gold films on nickelThin Solid Films, 1976
- The influence of surface diffusion on topography development of an amorphous solid during sputteringJournal of Materials Science, 1976
- Evaluation of concentration-depth profiles by sputtering in SIMS and AESApplied Physics A, 1976
- Die Analyse monomolekularer FestkörperoberflÄchenschichten mit Hilfe der SekundÄrionenemissionThe European Physical Journal A, 1970