Optical spectroscopy of self-organized nanoscale hetero-structures involving high-index surfaces
- 1 December 1995
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 26 (8) , 871-879
- https://doi.org/10.1016/0026-2692(95)00048-8
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Radiative recombination in type-II GaSb/GaAs quantum dotsApplied Physics Letters, 1995
- Structural characterization of (In,Ga)As quantum dots in a GaAs matrixPhysical Review B, 1995
- InAs/GaAs quantum dots radiative recombination from zero‐dimensional statesPhysica Status Solidi (b), 1995
- Low threshold, large
T
o
injectionlaser emissionfrom (InGa)As quantum dotsElectronics Letters, 1994
- Self-organized growth of regular nanometer-scale InAs dots on GaAsApplied Physics Letters, 1994
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Semiconductor quantum-wire structures directly grown on high-index surfacesPhysical Review B, 1992
- Direct synthesis of corrugated superlattices on non-(100)-oriented surfacesPhysical Review Letters, 1991
- Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)Applied Physics Letters, 1990
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990