Scanning electron microscope charge-collection images of grain boundaries

This publication has 12 references indexed in Scilit:

• Imaging of the silicon on sapphire interface by high-resolution transmission electron microscopy
  Applied Physics Letters, 1981
• Measurements of deep penetration of low-energy electrons into metal-oxide-semiconductor structure
  Journal of Applied Physics, 1981
• Quantitative Properties of SEM-EBIC Images of Stacking Faults in Silicon
  Japanese Journal of Applied Physics, 1980
• Computer simulation of SEM electron beam induced current images of dislocations and stacking faults
  Journal of Applied Physics, 1980
• On the characterization of electrically active inhomogeneities in semiconductor silicon by charge collection at schottky barriers using the SEM‐EBIC (I). Fundamentals and contrast due to macroscopical inhomogeneities
  Crystal Research and Technology, 1980
• On the characterization of electrically active inhomogeneities in semiconductor silicon by charge collection at schottky barriers using the SEM‐EBIC (II). Contrast due to defects
  Crystal Research and Technology, 1980
• Analysis of the interaction of an electron beam with a solar cell—III
  Solid-State Electronics, 1979
• Contrast and resolution of SEM charge-collection images of dislocations
  Applied Physics Letters, 1979
• Low-cost solar cells based on large-area unconventional silicon
  IEEE Transactions on Electron Devices, 1977
• Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid Materials
  Journal of Applied Physics, 1971