Characterization and application of fine-patterned Si/CoSi2/Si double heterostructures fabricated by self-aligned, two-step MBE
- 2 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 957-960
- https://doi.org/10.1016/0022-0248(91)91114-p
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- CoSi2 and Si epitaxial growth in 〈111〉 Si submicron lines with application to a permeable base transistorApplied Physics Letters, 1988
- SPE-CoSi2submicrometer lines by lift-off using selective reaction and its application to a permeable-base transistorIEEE Transactions on Electron Devices, 1986
- Theoretical study of the atomic structure of silicon (211), (311), and (331) surfacesPhysical Review B, 1984