Determination of CNDO parameters for germanium and their application to simple germanium molecules
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 49 (8) , 883-886
- https://doi.org/10.1016/0022-3697(88)90004-2
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- The nature of the charged-self-interstitial in siliconJournal of Physics C: Solid State Physics, 1987
- Models for two intense Si-H infrared stretching bands in FZ-Si grown in hydrogenJournal of Physics C: Solid State Physics, 1987
- Defect calculations in semiconductors Theoretical principles as illustrated by current calculationsPhilosophical Magazine Part B, 1985
- Semi‐Empirical Tight Binding Calculations for the Energy Bands of the Diamond and Zincblende Type SemiconductorsPhysica Status Solidi (b), 1984
- Nature and diffusion of the self-interstitial in siliconJournal of Physics C: Solid State Physics, 1983
- Interstitial muons and hydrogen in crystalline siliconPhysica B+C, 1983
- A large unit cell semiempirical molecular orbital approach to the properties of solids. II. Covalent materials: diamond and siliconJournal of Physics C: Solid State Physics, 1979
- A large unit cell semiempirical molecular orbital approach to the properties of solids. I. General theoryJournal of Physics C: Solid State Physics, 1979
- The structure and motion of the self-interstitial in diamondSolid-State Electronics, 1978
- Relaxation about the vacancy in diamondJournal of Physics C: Solid State Physics, 1978