Insulated-gate multiple quantum well optical modulator on InP
- 5 November 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (19) , 1964-1966
- https://doi.org/10.1063/1.103981
Abstract
Insulated‐gate metal‐insulator‐semiconductor (MIS) diodes have been fabricated on multiple quantum well stacks of InP/InGaAs grown by gas‐source molecular beam epitaxy. These devices have shown excitonic resonances and optical modulation spectra in pass‐through operation similar in shape, but smaller in magnitude, to what has been previously reported with p‐i‐n and Schottky diode structures. Compared to these other devices the MIS modulator has the advantage of being totally planar with excellent interdevice electrical isolation suggesting its suitability for high complexity array applications.Keywords
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