Spatial light modulators using charge-coupled-device addressing and electroabsorption effects in GaAs/AlGaAs multiple quantum wells
- 4 April 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (14) , 1116-1118
- https://doi.org/10.1063/1.99179
Abstract
We describe the fabrication and performance of the first spatial light modulators (SLM’s) which combine addressing in AlGaAs charge-coupled devices (CCD’s) and electroabsorption effects in GaAs/AlGaAs multiple quantum wells (MQW’s). One-dimensional, sixteen-stage, three-phase AlGaAs CCD’s with semitransparent gates were fabricated on the surface of the SLM. The optical signal propagates normal to the surface and enters the SLM through the gates. The transmission of this signal through the MQW is then modulated according to the channel voltage of the CCD’s. The maximum contrast ratio at 847 nm was measured to be 1.45:1 for these GaAs/AlGaAs -based SLM’s.Keywords
This publication has 8 references indexed in Scilit:
- Stark effect in AlxGa1−xAs/GaAs coupled quantum wellsApplied Physics Letters, 1987
- Multiple quantum well reflection modulatorApplied Physics Letters, 1987
- Integrated quantum well self-electro-optic effect device: 2×2 array of optically bistable switchesApplied Physics Letters, 1986
- Quantum-well charge-coupled devices for charge-coupled device-addressed multiple-quantum-well spatial light modulatorsJournal of Vacuum Science & Technology B, 1986
- A gallium arsenide overlapping-gate charge-coupled deviceIEEE Electron Device Letters, 1985
- High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structureApplied Physics Letters, 1984
- Continuously clocked 1 GHz GaAs CCDIEEE Electron Device Letters, 1981
- GaAs and related heterojunction charge-coupled devicesIEEE Transactions on Electron Devices, 1980