Silicon damage and residue overlayer caused by rie and ribe processes with CHF3

This publication has 8 references indexed in Scilit:

• Carbonaceous overlayer and near-surface damage after pure CF4 reactive ion beam etching of silicon: Exposure dose effects
  Applied Surface Science, 1989
• Contamination of Silicon Surfaces Exposed to CHF 3 Plasmas: An XPS Study of the Film and the Film‐Surface Interface
  Journal of the Electrochemical Society, 1988
• Reactive ion etching related Si surface residues and subsurface damage: Their relationship to fundamental etching mechanisms
  Journal of Vacuum Science & Technology A, 1987
• Triplasmatron sources for broad and reactive ion beams
  Vacuum, 1986
• Formation of a silicon-carbide layer during CF4/H2 dry etching of Si
  Applied Physics Letters, 1985
• Plasma-Assisted Etching in Microfabrication
  Annual Review of Materials Science, 1983
• Plasma polymerization of ethylene and the series of fluoroethylenes: plasma effluent mass spectrometry and ESCA studies
  Macromolecules, 1981
• Initial and final state effects in the ESCA spectra of cadmium and silver oxides
  The Journal of Chemical Physics, 1977