Double Crystal Topography Compensating for the Strain in Processed Samples
- 16 May 1985
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 89 (1) , 79-87
- https://doi.org/10.1002/pssa.2210890107
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Sensitivity of plane wave topography to microdefectsPhysica Status Solidi (a), 1983
- Checking Plane Wave Approximation for Double Crystal Topography with Curved SamplesZeitschrift für Naturforschung A, 1982
- Synchrotron-radiation plane-wave topography I. Application to misfit dislocation imaging in III-V heterojunctionsPhilosophical Magazine A, 1980
- Evaluation of GaAs/AlGaAs Double-Heterostructure Wafers and Lasers by X-Ray TopographyJapanese Journal of Applied Physics, 1979
- X-ray double-crystal diffractometry of Ga1−xAlxAs epitaxial layersJournal of Crystal Growth, 1978
- Determination of the lattice constant of epitaxial layers of III-V compoundsJournal of Crystal Growth, 1978
- Misfit dislocation characteristics in quarternary heterojunctions Ga1-xAlxAs1-yPy/GaAs analysed by synchrotron radiation white beam topographyJournal of Crystal Growth, 1978
- Double-crystal spectrometer measurements of lattice parameters and X-ray topography on heterojunctions GaAs–AlxGa1−xAsActa Crystallographica Section A, 1976
- X-Ray Crystal Collimators Using Successive Asymmetric Diffractions and Their Applications to Measurements of Diffraction Curves. I. General Considerations on CollimatorsJournal of the Physics Society Japan, 1970
- Zur röntgenographischen Bestimmung des Typs einzelner Versetzungen in EinkristallenThe European Physical Journal A, 1958