HBT IC manufacturability and reliability

This publication has 8 references indexed in Scilit:

• Reliability analysis of microwave GaAs/AlGaAs HBTs with beryllium and carbon doped base
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• Reliability of InP-based HBT IC technology for high-speed, low-power applications
  IEEE Transactions on Microwave Theory and Techniques, 1995
• 39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology
  IEEE Electron Device Letters, 1992
• Structural and optical properties of Al0.48In0.52As layers grown on InP by molecular beam epitaxy: Influence of the substrate temperature and of a buffer layer
  Journal of Applied Physics, 1991
• A monolithic 5 Gb/s p-i-n/HBT integrated photoreceiver circuit realized from chemical beam epitaxial material
  IEEE Photonics Technology Letters, 1991
• The DC characteristics of GaAs/AlGaAs heterojunction bipolar transistors with application to device modeling
  IEEE Transactions on Electron Devices, 1990
• Reduction in interfacial recombination velocity by superlattice buffer layers in GaAs/AlGaAs quantum well structures
  Applied Physics Letters, 1989
• Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxy
  Applied Physics Letters, 1984