Ti-Si-N diffusion barriers between silicon and copper
- 1 August 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (8) , 298-300
- https://doi.org/10.1109/55.296222
Abstract
Thin films of Ti-Si-N, reactively spattered from a Ti/sub 5/Si/sub 3/ target, are assessed as diffusion barriers between silicon substrates and copper overlayers. By tests on shallow-junction diodes, a 100 nm Ti/sub 34/Si/sub 23/N/sub 43/ barrier is able to prevent copper from reaching the silicon substrate during a 850/spl deg/C/30 min anneal in vacuum. A 10 nm film prevents diffusion up to 650/spl deg/C/30 min. By high-resolution transmission electron microscopy, Ti/sub 34/Si/sub 23/N/sub 43/ predominantly consists of nanophase TiN grains roughly 2 nm in size.<>Keywords
This publication has 19 references indexed in Scilit:
- Evaluation of amorphous (Mo, Ta, W)SiN diffusion barriers for 〈Si〉|Cu metallizationsThin Solid Films, 1993
- Enhanced sputtering of one species in the processing of multielement thin filmsJournal of Vacuum Science & Technology A, 1992
- Growth and Properties of Low Pressure Chemical-Vapor-Deposited TiN for Ultra Large Scale integrationJapanese Journal of Applied Physics, 1991
- Tantalum-based diffusion barriers in Si/Cu VLSI metallizationsJournal of Applied Physics, 1991
- LPCVD Titanium Nitride for ULSIsJournal of the Electrochemical Society, 1991
- Characterization of CVD-TiN Films Prepared with Metalorganic SourceJapanese Journal of Applied Physics, 1990
- Characterization of titanium nitride thin filmsThin Solid Films, 1990
- Chemical vapor deposition of titanium nitride at low temperaturesThin Solid Films, 1986
- Investigation of reactively sputtered TiN films for diffusion barriersThin Solid Films, 1986
- Phase equilibria in thin-film metallizationsJournal of Vacuum Science & Technology B, 1984