Novel refractory contact and interconnect metallizations for high-voltage and smart-power applications

This publication has 18 references indexed in Scilit:

• Effect of gate resistance on high-frequency power switching efficiencies of advanced power MOSFETs
  IEEE Journal of Solid-State Circuits, 1990
• Self-aligned cobalt disilicide for gate and interconnection and contacts to shallow junctions
  IEEE Transactions on Electron Devices, 1987
• A new integrated silicon gate technology combining bipolar linear, CMOS logic, and DMOS power parts
  IEEE Transactions on Electron Devices, 1986
• Lateral HVIC with 1200-V bipolar and field-effect devices
  IEEE Transactions on Electron Devices, 1986
• The operation of power MOSFET in reverse mode
  IEEE Transactions on Electron Devices, 1983
• Power semiconductor switching devices—A comparison based on inductive switching
  IEEE Transactions on Electron Devices, 1982
• Effect of scaling of interconnections on the time delay of VLSI circuits
  IEEE Transactions on Electron Devices, 1982
• Speed limitations due to interconnect time constants in VLSI integrated circuits
  IEEE Electron Device Letters, 1982
• Electromigration-Induced Failures in VLSI Interconnects
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1982
• Nonplanar power field-effect transistors
  IEEE Transactions on Electron Devices, 1978