A deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6H–SiC

1.7 MeV electron irradiation-induced deep levels in p-type 6H–SiC have been studied using deep level transient spectroscopy. Two deep hole traps are observed, which are located at $E_V$ +0.55 eV and $E_V$ +0.78 eV. They have been identified as two different defects because they have different thermal behaviors. These defects at $E_V$ +0.55 eV and $E_V$ +0.78 eV are annealed out at 500–200 °C, respectively, and are different from the main defects $\text{E1/E2,\hspace{0.5em}Z1/Z2}$ observed in electron irradiated n-type 6H–SiC. This indicates that new defects have been formed in p-type 6H–SiC during electron irradiation.