Reactions on Semiconductor Surfaces
- 29 January 1999
- journal article
- perspective
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 283 (5402) , 646-647
- https://doi.org/10.1126/science.283.5402.646
Abstract
Reactions with semiconductor surfaces are important for many processes such as epitaxial growth, dopant incorporation, and patterning that underlie semiconductor technology. Recent advances in scanning tunneling microscopy techniques have enabled substantial progress in identifying the underlying processes. The studies highlight the importance of an exact knowledge of local structural and electronic environments and their interactions with chemical species. In conjunction with computer simulations, these insights are invaluable for developing future nanotechnological devices.This publication has 9 references indexed in Scilit:
- Site-Selective Reaction ofwith Second Layer Ga Atoms on the As-richSurfacePhysical Review Letters, 1998
- Single-Molecule Vibrational Spectroscopy and MicroscopyScience, 1998
- The origin of Ga2O3 passivation for reconstructed GaAs(001) surfacesJournal of Applied Physics, 1998
- Theory of Adsorption and Desorption ofMolecules on the Si(111)-surfacePhysical Review Letters, 1997
- Site-Specific Displacement of Si Adatoms on Si(111)-Physical Review Letters, 1997
- Nucleation and Growth of Islands on GaAs SurfacesPhysical Review Letters, 1997
- Atomistic Processes in the Early Stages of Thin-Film GrowthScience, 1997
- Direct Chemisorption Site Selectivity for Molecular Halogens on the Si(111)-SurfacePhysical Review Letters, 1996
- Influence of chemical character on GaAs(111) surface reconstructionJournal of Applied Physics, 1994