Scanning tunneling microscopy study of the epitaxial growth of strained In0.82Ga0.18As layers on InP
- 15 May 1996
- journal article
- Published by Elsevier in Surface Science
- Vol. 352-354, 60-65
- https://doi.org/10.1016/0039-6028(95)01091-2
Abstract
No abstract availableKeywords
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