Design, Fabrication, and Performance of Monolithic Dielectrically Stabilized PM-HFET Oscillators Up to 60 GHz
- 1 September 1994
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 361-365
- https://doi.org/10.1109/euma.1994.337235
Abstract
Monolithic HFET dielectrically stabilized oscillators (DROs) are designed based on results obtained, from hybrid HFET DROs /1,2/. The monolithic chips are fabricated using MBE grown 2" substrates. The employed low noise quarter micron InGaAs/GaAs pseudomorphic (PM) HFET devices yield fT and fmax values of the least 70 GHz and 140 GHz. State. of-the-art topology DROs show an output power of +11 dBm and +2.3 dBm. at 36 GHz and 62 GHz, respectively. Excellent phase noise data of -97 dBc/Hz at 100 kHz off carrier (Ka-band DRO) and -101 dBc/Hz at 1 MHz off carrier (V-band DRO) are obtained.Keywords
This publication has 3 references indexed in Scilit:
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- Monolithic 38 GHz dielectric resonator oscillatorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Ka- and W-band PM-HFET DROsIEEE Microwave and Guided Wave Letters, 1993