Ka- and W-band PM-HFET DROs
- 1 June 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 3 (6) , 191-193
- https://doi.org/10.1109/75.219811
Abstract
Dielectric resonator stabilized oscillators have been designed, fabricated, and investigated. The oscillators consist of microstrip matching and biasing circuits on alumina substrate, a dielectric resonator puck, and a low-noise quarter-micron InGaAs-GaAs pseudomorphic (PM) HFET as the active device. At 37 GHz and 81 GHz, output powers of 10 dBm and 0 dBm have been measured. The phase noise of the Ka-band and W-band oscillators has been determined to be -97 dBc/Hz at 100 kHz and -90 dBc/Hz at 1 MHz off carrier, respectively.Keywords
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