Quarter-micrometer low-noise pseudomorphic GaAs HEMTs with extremely low dependence of the noise figure on drain-source current
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (1) , 16-18
- https://doi.org/10.1109/55.215086
Abstract
Quarter-micrometer pseudomorphic (PM) AlGaAs-InGaAs-GaAs HEMTs with an In mole fraction of 21% have been successfully developed, fabricated, and characterized. The devices are realized in a commercial technology by using a multiple-gate-finger layout with air bridges for the interconnection of the source pads and a Si/sub 3/N/sub 4/ passivation. PM HEMTs with a gate width of 6*20 mu m exhibit state-of-the-art noise figures of 0.65 and 0.82 dB with an associated gain of 14.5 and 11.5 dB at 12 and 18 GHz, respectively. The noise figure shows the lowest dependence on the drain-source current yet reported with Delta F/sub max/<0.12 dB for a wide biasing range from 25% I/sub dss/ up to 150% I/sub dss/ at 12 GHz when I/sub dss/=170-250 mA/mm.Keywords
This publication has 9 references indexed in Scilit:
- Low-noise pseudomorphic dual-gate cascode HEMTs with extremely high gainIEEE Microwave and Guided Wave Letters, 1992
- 60-GHz pseudomorphic Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.28/Ga/sub 0.72/As low-noise HEMTsIEEE Electron Device Letters, 1991
- 94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTsIEEE Electron Device Letters, 1990
- High-gain, V-band, low-noise MMIC amplifiers using pseudomorphic MODFETsIEEE Electron Device Letters, 1990
- W-band low-noise InAlAs/InGaAs lattice-matched HEMTsIEEE Electron Device Letters, 1990
- Ultra-low-noise millimeter-wave pseudomorphic HEMTsIEEE Transactions on Microwave Theory and Techniques, 1989
- Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate lengthIEEE Electron Device Letters, 1988
- Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistorIEEE Electron Device Letters, 1986
- Design of Microwave GaAs MESFET's for Broad-Band Low-Noise AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1979