Application of deep level transient spectroscopy to metal-oxide-semiconductor relaxation transients

Publisher Website
Google Scholar
Abstract
A method for determining minority carrier generation lifetimes and hold times in metal-oxide-semiconductor devices is presented. The technique overcomes some of the uncertainties inherent in the commonly used Zerbst lifetime measurement and can be used on very small devices. In the method a deep level transient spectroscopy system is used to separate generation currents of different activation energies, and to provide values for these energies, so indicating the source of the generation at a particular temperature. In the range where generation in the depletion region is dominant, the minority-carrier generation lifetime can be derived. In all cases the data can be directly related to the ‘‘hold’’ time of a metal-oxide-semiconductor capacitor.