Optical study of GaAs/GaAlAs quantum structures processed by high energy focused ion beam implantation
- 1 April 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 228 (1-3) , 306-309
- https://doi.org/10.1016/0039-6028(90)90315-y
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Mechanism of Ga Implantation-Induced Intermixing of GaAs-AlGaAs MaterialJapanese Journal of Applied Physics, 1989
- Optical investigation of the heavy hole-light hole splitting in thin GaAs/GaAlAs quantum wellsSolid State Communications, 1988
- Fabrication of a GaAs quantum-well-wire structure by Ga focused-ion-beam implantation and its optical propertiesPhysical Review B, 1988
- Current-density profiles for a Ga+ ion microprobe and their lithographic implicationsApplied Physics Letters, 1987
- Interface roughness scattering in GaAs/AlAs quantum wellsApplied Physics Letters, 1987
- Carrier confinement potential in quantum-well wires fabricated by implantation-enhanced interdiffusion in the GaAs-As systemPhysical Review B, 1987
- Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxesApplied Physics Letters, 1986
- Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire StructuresJapanese Journal of Applied Physics, 1980