Deep levels produced by pairs of impurities in InP
- 1 August 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (8) , 5139-5142
- https://doi.org/10.1063/1.329413
Abstract
The major chemical trends in the energy levels of nearest-neighbor-paired, substitutional, sp3-bonded defects in InP are predicted. Schemes for manipulating the deep levels of an isolated impurity by pairing with a second impurity are proposed, and applied to the isolated deep C donor and the deep P-antisite defect in InP.This publication has 12 references indexed in Scilit:
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