Far-infrared dielectric constant of porous silicon layers measured by terahertz time-domain spectroscopy
- 1 June 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (11) , 6007-6010
- https://doi.org/10.1063/1.367467
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Nature of Conduction in Doped SiliconPhysical Review Letters, 1997
- About the origin and the mechanisms involved in the cracking of highly porous silicon layers under capillary stressesThin Solid Films, 1996
- A reliable method for extraction of material parameters in terahertz time-domain spectroscopyIEEE Journal of Selected Topics in Quantum Electronics, 1996
- Hydrogenic impurity levels, dielectric constant, and Coulomb charging effects in silicon crystallitesPhysical Review B, 1995
- Characterization of Porous Silicon: Structural, Optical and Electrical PropertiesMRS Proceedings, 1992
- Microwave dielectric measurements of zirconia-alumina ceramic composites: A test of the Clausius–Mossotti mixture equationsJournal of Applied Physics, 1991
- Porosity and Pore Size Distributions of Porous Silicon LayersJournal of the Electrochemical Society, 1987
- Optical properties of porous silicon filmsThin Solid Films, 1985
- Optical studies of the structure of porous silicon films formed in p-type degenerate and non-degenerate siliconJournal of Physics C: Solid State Physics, 1984
- Determination of lattice parameter and elastic properties of porous silicon by X-ray diffractionJournal of Crystal Growth, 1984