Nonpolar-lattice scattering for holes in cubic semiconductors
- 1 June 1972
- journal article
- Published by Springer Nature in Lettere al Nuovo Cimento (1971-1985)
- Vol. 4 (5) , 171-175
- https://doi.org/10.1007/bf02756313
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Polar Mobility of Holes in III-V CompoundsPhysical Review B, 1971
- Lattice Mobility of Holes in III-V CompoundsPhysical Review B, 1970
- Temperature-dependence of the combined effective mass of holes in siliconLettere al Nuovo Cimento (1971-1985), 1970
- On the Temperature Dependence of Hole Mobility in SiliconPhysica Status Solidi (b), 1970
- Electric Conductivity of Hot Carriers in Si and GePhysica Status Solidi (b), 1969
- Low-Field Mobility and Galvanomagnetic Properties of Holes in Germanium with Phonon ScatteringPhysical Review B, 1968
- Acoustic-mode scattering mobility of holes in diamond type semiconductorsJournal of Physics and Chemistry of Solids, 1964
- Analysis of Lattice and Ionized Impurity Scattering in-Type GermaniumPhysical Review B, 1962
- Scattering of Holes by Phonons in GermaniumPhysical Review B, 1956
- Energy band structure in p-type germanium and siliconJournal of Physics and Chemistry of Solids, 1956