Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots

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Abstract
In this article we report the results of time integrated and time resolvedphotoluminescencespectroscopy and photoluminescence time decay measurements as a function of excitation density at 6 K on high quality self-organized InAs/GaAs quantum dots. To understand the form of the experimentally observed photoluminescence transients a Monte Carlo model has been developed that allows for the effects of random capture of photo-excited carriers. By comparison with the results of our model we are able to ascribe the excitation density dependence of the overall form of the decay of the emission from the quantum dotground states and the biexponential nature of the decay of the first excited state emission as being due to the combined effects of radiative recombination, density dependent carrier scattering, and the restriction of carrier scattering due to state blocking caused by the effects of Pauli exclusion. To successfully model the form of the biexponential decay of the highest energy excited states we have to invoke the nonsequential scattering of carriers between the quantum dot states.