Relaxation and recombination in ultrasmall InAs quantum dots
- 1 January 1996
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 40 (1-8) , 363-366
- https://doi.org/10.1016/0038-1101(95)00329-0
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAsPhysical Review Letters, 1994
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Electron relaxation in quantum dots by means of Auger processesPhysical Review B, 1992
- In situ probing at the growth temperature of the surface composition of (InGa)As and (InAl)AsApplied Physics Letters, 1992
- Intrinsic mechanism for the poor luminescence properties of quantum-box systemsPhysical Review B, 1991
- InAs quantum dots in a single-crystal GaAs matrixPhysical Review B, 1991
- Effect of strain on surface morphology in highly strained InGaAs filmsPhysical Review Letters, 1991
- Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gasesPhysical Review B, 1990
- First stages of the MBE growth of InAs on (001)GaAsJournal of Crystal Growth, 1987
- Nucleation and strain relaxation at the InAs/GaAs(100) heterojunctionJournal of Vacuum Science & Technology B, 1983