Variable temperature hall effect on p-Hg1−xCdxTe grown on CdTe and sapphire substrates by liquid phase epitaxy
- 1 May 1985
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 14 (3) , 245-268
- https://doi.org/10.1007/bf02661221
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Effects of annealing on Hg0.79Cd0.21Te epilayersJournal of Applied Physics, 1980
- Electrical properties of as-grown Hg1−xCdxTe epitaxial layersJournal of Applied Physics, 1980
- Electrical and far-infrared optical properties of p-type Hg1−xCdxTeJournal of Applied Physics, 1976
- Carrier freeze-out and acceptor energies in p-type Hg1−xCdxTeJournal of Physics and Chemistry of Solids, 1972