Transport of broadening charge packets at surfaces
- 1 July 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (7) , 5013-5021
- https://doi.org/10.1063/1.331377
Abstract
Surface transport of charge packets in metal-oxide-semiconductor structures is studied theoretically. The governing nonlinear partial differential equation is derived, and an approximate analytical solution to it is found. It shows that the density in the packet approximates an inverted truncated parabola whose width increases as the cube root of time, and whose drift velocity has a time dependence determined by the self-generated and applied electric fields normal to the surface. The time average of the self-generated and applied normal fields is shown to result in averages of the two fields over different portions of the drift channel. The flux peak velocity, which is measured in a time-of-flight experiment, is shown to be the sought-after drift velocity of the density peak plus the (negative) velocity of the flux peak relative to the density peak. An expression for the latter quantity is developed. A relation between the flux peak velocity and the drift velocity at the flux peak is also derived.This publication has 3 references indexed in Scilit:
- Cube-root broadening of surface-charge packetsApplied Physics Letters, 1981
- Measurement of the high-field drift velocity of electrons in inversion layers on siliconIEEE Electron Device Letters, 1981
- Charge transfer in overlapping gate charge-coupled devicesIEEE Journal of Solid-State Circuits, 1973