Cluster‐Bethe‐Lattice Treatment of the Interstitial Boron Centre in Irradiated Gallium Arsenide

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Abstract
The radiation‐induced interstitial defect B(1) in GaAs is theoretically analysed by a cluster‐Bethe lattice treatment. Theoretical results obtained for a B—Ga dumbbell in gallium arsenide agree quite well with experimental data. The dumbbell coupling is about three times stiffer than the bonds between host‐lattice atoms. The separation of thedumbbell atoms amounts to one lattice constant. Due to the isotopy of gallium atoms all B(1) bands should exhibit a double‐peak structure with a small frequency split of about 1, 0.1, and 0.4 cm−1 for the A1, B1, and B2 modes, respectively. A resolution of these splittings would supply additional evidence for the B(1) defectmodel discussed here.