Energy scaling and subnanosecond switching of symmetric self-electrooptic effect devices
- 1 June 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 1 (6) , 129-131
- https://doi.org/10.1109/68.36011
Abstract
The authors report the scaling of switching energy with device area for four sizes of symmetric self-electrooptic effect devices, the smallest of which has a switching energy of 3.6 pJ. Switching speeds of approximately 2 ns at 15 V bias and approximately 860 ps at 22 V bias were attained by using mode-locked (6 ps) pulses, although the energies in these pulses were somewhat higher, because of saturation of the quantum-well material. Making the device area only moderately larger than the spot size is suggested as a method of avoiding this saturation.Keywords
This publication has 10 references indexed in Scilit:
- Symmetric self-electro-optic effect device: Optical set-reset latchApplied Physics Letters, 1988
- Spatial light modulator and optical dynamic memory using a 6 × 6 array of self-electro-optic-effect devicesOptics Letters, 1988
- Self-electro-optic effect device and modulation convertor with InGaAs/InP multiple quantum wellsApplied Physics Letters, 1988
- Multiple quantum well reflection modulatorApplied Physics Letters, 1987
- Novel nonresonant optoelectronic logic deviceElectronics Letters, 1987
- Integrated quantum well self-electro-optic effect device: 2×2 array of optically bistable switchesApplied Physics Letters, 1986
- Electric-field dependence of linear optical properties in quantum well structures: Waveguide electroabsorption and sum rulesIEEE Journal of Quantum Electronics, 1986
- The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulationIEEE Journal of Quantum Electronics, 1985
- Novel hybrid optically bistable switch: The quantum well self-electro-optic effect deviceApplied Physics Letters, 1984
- Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structuresIEEE Journal of Quantum Electronics, 1984