Photoionization of impurity atoms in semiconductors in the presence of an applied electric field
- 31 December 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (12) , 1151-1155
- https://doi.org/10.1016/0038-1101(83)90142-9
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Rate of field ionization fromstates with a quantum defectPhysical Review A, 1981
- Fractional-Charge Impurities in SemiconductorsPhysical Review Letters, 1980
- Quantum-mechanical estimates of the speed of field ionization of shallow impurity levelsApplied Physics Letters, 1980
- Low-temperature field ionization of localized impurity levels in semiconductorsApplied Physics Letters, 1979
- New Charge-Storage Effect in SiliconDiodes at Cryogenic TemperaturesPhysical Review Letters, 1978
- Application of the Quantum-Defect Method to Optical Transitions Involving Deep Effective-Mass-Like Impurities in SemiconductorsPhysical Review B, 1969
- Application of quantum defect techniques to photoionization of impurities in semiconductorsJournal of Physics and Chemistry of Solids, 1967
- On the photoionization of deep impurity centers in semiconductorsSolid State Communications, 1965
- Coulomb Green's Function in Closed FormPhysical Review Letters, 1963
- Hyperfine Splitting of Donor States in SiliconPhysical Review B, 1955