Small-Angle Neutron Scattering from Oxygen Precipitates in Czochralski-Grown Silicon Crystals

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Abstract
Small-angle neutron scattering (SANS) from oxygen precipitates in Czochralski-grown silicon crystals, annealed at several tempertures (600, 700, 750 and 800°C) for various periods, has been measured in order to investigate the growth mechanism of oxygen precipitation. It was confirmed that the precipitate grows two-dimensionally in a form of platelet with a thickness of about 40 Å, the plate surface being parallel to the {100} silicon lattice planes. It is considered from an analysis of the absolute values of the cross sections that the oxygen precipitates consist of oxygen-deficient oxides (SiO2-x ), or that the nucleation rate of the oxygen precipitate is less than the reported value. The mean size of oxygen precipitates grows according to less than the 3/4-th power of annealing time t at 750°C and to about the 3/4-th power of t at 800°C.