Wide terrace formation during metalorganic vapor phase epitaxy of GaAs, AlAs, and AlGaAs
- 12 September 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (11) , 1418-1420
- https://doi.org/10.1063/1.112069
Abstract
GaAs, Al0.35Ga0.65As, and AlAs surface terrace structures formed during metalorganic vapor phase epitaxy (MOVPE) on vicinal (001) surfaces are investigated. The minimal terrace width for two-dimensional (2-D) nucleation for AlGaAs is almost equal to that for GaAs. In contrast, for AlAs it is reduced and the growth mode becomes three dimensional at temperatures below 580 °C. Monolayer step-flow growth without 2-D islands and terraces about 1 μm wide are obtained above 630 °C for all materials. These results are very different from those by molecular beam epitaxy and suggest that MOVPE is superior to grow wide uniform heterointerfaces for GaAs/AlAs and GaAs/AlGaAs.Keywords
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