The emitter efficiency of silicon transistors

This publication has 10 references indexed in Scilit:

• Transport equations in heavily doped silicon, and the current gain of a bipolar transistor
  Solid-State Electronics, 1973
• Calculation of the emitter efficiency of bipolar transistors
  IEEE Transactions on Electron Devices, 1973
• Auger-rekombination in Si
  Solid State Communications, 1973
• Transport equations in heavy doped silicon
  IEEE Transactions on Electron Devices, 1973
• The influence of heavy doping on the emitter efficiency of a bipolar transistor
  IEEE Transactions on Electron Devices, 1971
• Impurity concentration dependent density of states and resulting fermi level for silicon
  Solid-State Electronics, 1971
• Semiconductor-to-Metal Transition inn-Type Group IV Semiconductors
  Reviews of Modern Physics, 1968
• Broadening of Impurity Bands in Heavily Doped Semiconductors
  Physical Review B, 1965
• Thomas-Fermi Approach to Impure Semiconductor Band Structure
  Physical Review B, 1963
• Diffused Emitter and Base Silicon Transistors*
  Bell System Technical Journal, 1956