Epitaxial titanium silicide islands and nanowires
- 1 February 2003
- journal article
- Published by Elsevier in Surface Science
- Vol. 524 (1-3) , 148-156
- https://doi.org/10.1016/s0039-6028(02)02506-2
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Reduction of the C54-TiSi2Phase Formation Temperature Using Metallic ImpuritiesMRS Proceedings, 1995
- Kinetic mechanisms of theC49-to-C54 polymorphic transformation in titanium disilicide thin films: A microstructure-scaled nucleation-mode transitionPhysical Review B, 1994
- Transition metal silicides in silicon technologyReports on Progress in Physics, 1993
- Phase Transition and Formation of TiSi2 Codeposited on Atomically Clean Si(111).MRS Proceedings, 1993
- Epitaxial CoSi2 and NiSi2 thin filmsMaterials Chemistry and Physics, 1992
- Phase formation in the interfacial reactions of ultrahigh vacuum deposited titanium thin films on (111)SiJournal of Applied Physics, 1992
- Growth and characterization of epitaxial Ni and Co silicidesMaterials Science Reports, 1992
- Growth of epitaxial C54 TiSi2 on Si(111) substrate by in situ annealing in ultrahigh vacuumJournal of Applied Physics, 1992
- Thickness Dependence of Epitaxial TiSi2 on Si(111).MRS Proceedings, 1990
- Epitaxial Growth of Transition Metal Silicides on SiliconMRS Proceedings, 1985